Consider an idealized silicon npn bipolar transistor with the properties listed in Table 6Q9-1. Assumeuniform doping in each region. The emitter and base widths are between metallurgical junctions (notneutral regions). The cross-sectional area is 100 μm × 100 μm. The transistor is biased to operate inthe normal active mode. The base-emitter forward bias voltage is 0.6 V and the reverse bias basecollectorvoltage is 18 V.

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